600v n-channel mosfet 1 . description the kia7N60 is a high voltage mosfet and is des igned to have better characteristics, such as fast switching time, low gate charge, low on- state resistance and have a high rugged avalanche characteristics. this power mosf et is usually used at high speed switching applications in power supplies, pwm motor controls , high efficient dc to dc converters and bridge circuits. 2 . features ? 6.9a, 600v, r ds(on) = 1.1 ? @ v gs = 10 v ? low gate charge ( typical 32nc) ? low crss ( typical 15pf) ? fast switching ? 100% avalanche tested ? improved dv/dt capability 3. pin configuration pin function 1 gate 2 drain 3 source 7N60 kia semiconductors kia semiconductors kia semiconductors 1 of 7
600v n-channel mosfet 4. absolute maximum ratings (tc= 25 oc , unless otherwise specified) parameter symbol rating units drain-source voltage v dss 600 v tc=25 oc 6.9 a drain current tc=100 oc i d 4.14 a drain current pulsed (note 1) i dm 27.6 a gate-source voltage v gss 30 v single pulsed avalanche energy (note 2) e as 275 mj avalanche current (note 1) i ar 7 a repetitive avalanche energy (note 1) e ar 8.3 mj peak diode recovery dv/dt (note 3) dv/dt 4.5 v/ns tc=25 oc 83 w power dissipation derate above 25 oc p d 0.67 w/oc operating and storage temperature range t j , t stg -55 ~ +150 oc maximum lead temperature for soldering purposes,1/8?? from case for 5 seconds t l 300 oc 5. thermal characteristics parameter symbol rating unit thermal resistance,junction-to-case r jc 1.5 oc /w thermal resistance,junction-to-ambient r ja 62.5 oc /w 2 of 7 7N60 kia semiconductors kia semiconductors kia semiconductors
600v n-channel mosfet 6 . electrical characteristics (t j =25 c,unless otherwise notes) parameter symbol conditions min typ max unit off characteristics v gs =0v,i d =250 a, t j =25oc 600 v drain-source breakdown voltage bv dss v gs =0v,i d =250 a, t j =150oc 650 v breakdown voltage temperature coefficient bv dss / t j i d =250 a, referenced to 25 oc 0.6 v/oc v ds =600v ,v gs =0v 1 a zero gate voltage drain current i dss v ds =480v ,t c =125 oc 10 a forward i gssf v gs =30v,v ds =0v 100 na gate-body leakage current reverse i gssr v gs =-30v,v ds =0v -100 na on characteristics gate threshold voltage v gs(th) v ds =v gs , i d =250 a 2.0 4.0 v static drain-source on-resistance r ds(on) v gs =10v,i d =4.14a 0.9 1.1 ? forward transconductance g fs v ds =15v, i d =3.45a 10 s dynamic characteristics input capacitance c iss 1485 pf output capacitance c oss 122 pf reverse transfer capacitance c rss v ds =25v,v gs =0v,f=1.0mhz 15 pf switching characteristics turn-on delay time t d(on) 15 ns turn-on rise time t r 12 ns turn-off delay time t d(off) 41 ns turn-off fall time t f v dd =300v,i d =6.9a,r g =10? v gs =10v, r d =43.5 ? (note4) 19 ns total gate charge q g 32 nc gate-source charge q gs 7 nc gate-drain charge q gd v ds =300v, i d =6.9a ,v gs =10v, (note4) 14 nc drain-source diode characteristics and maximum rating maximum continuous drain-source diode forward current i s 6.9 a maximum pulsed drain-source diode forward current i sm 24 a drain-source diode forward voltage v sd v gs =0v,i s =3.45a 1.5 v reverse recovery time t rr 450 ns reverse recovery charge q rr v gs =0v,i s =6.9a di/dt=100a/ s (note4) 48 c note:1.repetitive rating:pulse width limited by maximum junctio/n temperature 2. .l=11.5mh ,i as =6.9a,v dd =50v,r g =25? ,staring t j =25oc 3.i sd < 6.9a,di/dt < 100a/ s,v dd < bv dss ,staring t j =25 oc 4.essentially independent of opera ting temperature typical characteristics 7N60 kia semiconductors kia semiconductors kia semiconductors 3 of 7
600v n-channel mosfet 7 . test circuits and waveforms 7N60 kia semiconductors kia semiconductors kia semiconductors 4 of 7
600v n-channel mosfet 7N60 kia semiconductors kia semiconductors kia semiconductors 5 of 7
600v n-channel mosfet 7N60 kia semiconductors kia semiconductors kia semiconductors 6 of 7
600v n-channel mosfet 7N60 kia semiconductors kia semiconductors kia semiconductors 7 of 7
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